完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | YU, SY | en_US |
dc.contributor.author | THOMAS, G | en_US |
dc.date.accessioned | 2014-12-08T15:06:31Z | - |
dc.date.available | 2014-12-08T15:06:31Z | - |
dc.date.issued | 1979 | en_US |
dc.identifier.issn | 0021-8979 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/5083 | - |
dc.identifier.uri | http://dx.doi.org/10.1063/1.326019 | en_US |
dc.language.iso | en_US | en_US |
dc.title | SIMPLIFIED APPROACH TO THE CURRENT-VOLTAGE CHARACTERISTICS OF THE P+NP+ DIODE BELOW REACH-THROUGH | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.326019 | en_US |
dc.identifier.journal | JOURNAL OF APPLIED PHYSICS | en_US |
dc.citation.volume | 50 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 969 | en_US |
dc.citation.epage | 971 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:A1979GK68800068 | - |
dc.citation.woscount | 2 | - |
顯示於類別: | 期刊論文 |