利用轉移技術在塑膠基板上製作高特性薄膜電晶體

Abstract

近年來將薄膜電晶體製作於塑膠基板的研究越來越多。塑膠基板比起傳統的玻璃基板，有著質輕，輕薄，不易碎，和可撓曲..等優點。使得近年來對塑膠基板的研究日益增多。而主要的技術大約可分為二種。第一是直接在塑膠基板上製作薄膜電晶體元件，但是由於受限於塑膠基板的製程溫度和塑膠基板和其上所沈積的薄膜之間的熱膨脹係數的差異所造成的塑膠變形，使得此種方法在元件特性上和製作元件的製程上有一定的困難度存在。第二是將製作完成的薄膜電晶體轉移到塑膠基板上。利用此種方法，不但可以製作特性較好的元件，且也不用考慮因塑膠變形所造成的微影蝕刻的困難。 在本實驗中，即是採用第二種方法來進行研究。而本實驗中又分別利用了一次轉移和二次轉移的技術，成功地將薄膜電晶體元件轉移至塑膠基板上。 由於是利用轉移技術，所以可以將薄膜電晶體直接製作於矽基板上，利用高溫製程來得到最後的高特性元件。而在本實驗中即利用金屬側向誘發結晶+後高溫退火，和高溫固相結晶法二種高溫製程來得到最後的高特性元件。

Recently, high performance thin-film transistors (TFTs) on plastic substrate have been studied. Plastic TFTs which have advantages of lighter weight, smaller thickness, higher shock-resistant and good flexibility has much potential for replacements of conventional TFTs on glass. Two technologies have been used to fabricate TFTs on plastic: a direct process and a transfer process. The direct process must to reduce the fabricating temperature to 100-150 degree C. On the other hand, the transfer process is not necessary to reduce the fabricating temperature and need less transfer demand on properties and quality of plastic substrate. In this experiment, the single transfer and double transfer techniques have been adopted to transfer TFTs to plastic substrate successfully. TFTs which were made with the high temperature poly silicon (HTPS) usually have higher electron mobility. The metal lateral induced + post annealing and high temperature solid phase crystallization were used for high performance TFTs. Then, the TFTs would be transfer to the plastic substrate since the transferring technique was developed.