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dc.contributor.author陳鉅棟en_US
dc.contributor.authorChen, Ju-Dongen_US
dc.contributor.author劉濬堯en_US
dc.contributor.author陳茂傑en_US
dc.contributor.authorLiu, Jun-Yaoen_US
dc.contributor.authorChen, Mao-Jieen_US
dc.date.accessioned2014-12-12T02:02:07Z-
dc.date.available2014-12-12T02:02:07Z-
dc.date.issued1980en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT694430041en_US
dc.identifier.urihttp://hdl.handle.net/11536/51409-
dc.description.abstract本文探討雷射輻射形成 PN 接面二柱體的特性。輻射能量超過一定值，在氧化矽層 上易顯出熔解現象，當輻射能量跟大時，材料劈裂是不可避免，這些缺陷嚴重影響 二柱體的特性。 想製造一個不同深淺接面的二柱體，尋找出最好的輻射能量是可得到的。 #2811436 #2811436zh_TW
dc.language.isozh_TWen_US
dc.subjectNd:YAG雷射zh_TW
dc.subject矽zh_TW
dc.subjectPN接面zh_TW
dc.subject輻射zh_TW
dc.subject二柱體zh_TW
dc.subject電子工程zh_TW
dc.subjectLASERen_US
dc.subjectSILICONen_US
dc.subjectELECTRONIC-ENGINEERINGen_US
dc.title利用Nd:YAG雷射的輻射研製矽－PN接面之二柱體zh_TW
dc.typeThesisen_US
dc.contributor.department電子研究所zh_TW
Appears in Collections:Thesis


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