E類功率放大器的理論與設計

Abstract

射頻功率放大器位於發射裝置的最末端，其效能的好壞將決定了整個系統的能源供給的情況。為了滿足CMOS製程的規範，我們選擇了適合藍芽系統的E類功率放大器作為電路架構。本論文將以單端輸出的基本架構理論為出發點，輔以微波電路板的實作進行驗證，最後採用共閘差動式E類功率放大器，來作為IC設計的架構。 本論文在第三章中提供了一設計E類功率放大器的基本設計公式，利用這個公式，我們在RO4003微波電路板上實現了一PAE可達58%的單端E類功率放大器，並在第四章中藉由設計單端E類功率放大器的經驗，使用台積電TSMC 0.18 CMOS標準製程模擬出一PAE可達47.55%，且符合藍芽系統規格的共閘差動式E類功率放大器。

RF power amplifier is at the end of transmitter, and its efficiency will decide the power supply consumption of all systems. In order to satisfy the condition of the CMOS process, we choose in this design the Class E power amplifier for Blue-tooth system. First, in this work, we derive the theory of single-ended power amplifier. Second, we use the fabrication of microwave circuit board to verify the result of theory, and finally adopt the common-gate differential mode Class E power amplifier to be the structure of IC design. In Chapter 3 of this thesis a formula is provided for designing Class E power amplifier. Using this formula, we realize the single-ended Class E power amplifier, where PAE (power added efficiency) can reach 58% on RO4003 microwave circuit board. Based on the knowledge of Chapter 3, in Chapter 4, we use the models of TSMC CMOS 0.18 process to simulate a common-gate differential mode Class E Power amplifier for Blue-tooth system in whish PAE can reach 47.55%.