Low-Voltage-Driven Flexible InGaZnO Thin-Film Transistor With Small Subthreshold Swing

標題:	Low-Voltage-Driven Flexible InGaZnO Thin-Film Transistor With Small Subthreshold Swing
作者:	Su, Nai-Chao Wang, Shui-Jinn Huang, Chin-Chuan Chen, Yu-Han Huang, Hao-Yuan Chiang, Chen-Kuo Chin, Albert 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	Flexible thin-film transistors (TFTs);HfLaO;high-kappa;InGaZnO (IGZO)
公開日期:	1-七月-2010
摘要:	A flexible thin-film transistor (TFT) was made by integrating a high-kappa HfLaO gate dielectric and an amorphous-InGaZnO (a-IGZO) active layer on a polyimide substrate. This flexible HfLaO/a-IGZO TFT exhibits a low threshold voltage of 0.1 V, a small subthreshold swing of 0.18 V/dec, a high maximum saturation mobility of 22.1 cm(2)/V . s, and an acceptable ON/OFF current ratio of 2 x 10(5). The low threshold voltage and small subthreshold swing allow the device to operate at 1.5 V for low-power applications, which should enable significant future progress in energy efficiency.
URI:	http://dx.doi.org/10.1109/LED.2010.2047232 http://hdl.handle.net/11536/5199
ISSN:	0741-3106
DOI:	10.1109/LED.2010.2047232
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	31
Issue:	7
起始頁:	680
結束頁:	682
顯示於類別：	期刊論文

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