| 標題: | 次微米大斜角植入式金氧半元件之特性分析與設計準則 Characterization and design guidelines of submicron LATID (LArge Tilt-angle Implanted Drain) MOS devices |
| 作者: | 周鵬程 莊紹勳 電子研究所 |
| 公開日期: | 1984 |
| URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT732428004 http://hdl.handle.net/11536/52022 |
| 顯示於類別： | 畢業論文 |
- 次微米大斜角植入式金氧半元件之特性分析與設計準則 / 周鵬程;Peng-Cheng Chou;莊紹勳;Steve S.Chung
- A new approach for characterizing structure-dependent hot-carrier effects in drain-engineered MOSFET's / Chung, SS;Yang, JJ
- BF2表面反攙雜植入對N型金氧半場效電晶體之效應研究 / 陳淮義;Hua-I Chen;張俊彥;Chun-Yen Chang
- A NEW APPROACH TO MODELING THE SUBSTRATE CURRENT OF PRESTRESSED AND POST-STRESSED MOSFETS / YANG, JJ;SHAOSHIUN, S;CHOU, PC;CHEN, CH;LIN, MS
- MOS之LDD在閘極覆蓋下的特性研究 / 蔡曜州;CAI,YAO-ZHOU;張俊彥;ZHANG,JUN-YAN
- INTERFACE-TRAP EFFECT ON GATE INDUCED DRAIN LEAKAGE CURRENT IN SUBMICRON N-MOSFETS / WANG, TH;HUANG, CM;CHANG, TE;CHOU, JW;CHANG, CY
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