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dc.contributor.author謝滋普en_US
dc.contributor.authorXIE, ZI-PUen_US
dc.contributor.author李崇仁en_US
dc.contributor.author雷添富en_US
dc.contributor.authorLI, CHONG-RENen_US
dc.contributor.authorLEI, TIAN-FUen_US
dc.date.accessioned2014-12-12T02:03:07Z-
dc.date.available2014-12-12T02:03:07Z-
dc.date.issued1984en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT732430027en_US
dc.identifier.urihttp://hdl.handle.net/11536/52078-
dc.description.abstract本文使用常壓四氫化矽化學氣相沉積系統來研究其在矽晶片上之選擇性磊晶。良好的 選性性可由加入適當的氯化氫氣體來達成。將氧化層之邊緣對準於(100) 的方同並加入適當的氯化氫氣體可在(100) 的矽晶片上得到很平滑的選擇性磊層。本 文同時探討了磊品層的碞質與均勻度。zh_TW
dc.language.isozh_TWen_US
dc.subject四氫化矽zh_TW
dc.subject矽晶片zh_TW
dc.subject磊晶zh_TW
dc.title四氫化矽在矽晶片上之選擇性磊晶zh_TW
dc.typeThesisen_US
dc.contributor.department電子研究所zh_TW
Appears in Collections:Thesis


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