标题: | Vertically Coupled Quantum-Dot Infrared Photodetectors |
作者: | Lo, Ming-Cheng Wang, Shiang-Yu Ling, Hong-Shi Lee, Chien-Ping 电子工程学系及电子研究所 Department of Electronics Engineering and Institute of Electronics |
关键字: | Infrared detectors;photodetectors;quantum dots (QDs);quantum effect semiconductor devices |
公开日期: | 1-六月-2010 |
摘要: | Vertically coupled InAs-GaAs quantum-dot infrared photodetectors (QDIPs) were studied in this letter. With vertically coupled quantum dots (QDs), the QDs in the same column share the same electronic states which remove the QD size variation effect in the growth direction and result in a narrow response band and higher peak quantum efficiency. The coupled states increase the capture probability and also facilitate the carrier flow among QD layers. The frequency response of vertically coupled QDIPs is much faster than that of the conventional ones. |
URI: | http://dx.doi.org/10.1109/LPT.2010.2046030 http://hdl.handle.net/11536/5381 |
ISSN: | 1041-1135 |
DOI: | 10.1109/LPT.2010.2046030 |
期刊: | IEEE PHOTONICS TECHNOLOGY LETTERS |
Volume: | 22 |
Issue: | 11 |
起始页: | 796 |
结束页: | 798 |
显示于类别: | Articles |
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