標題: Origins of Performance Enhancement in Independent Double-Gated Poly-Si Nanowire Devices
作者: Hsu, Hsing-Hui
Lin, Horng-Chih
Huang, Tiao-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Double gate (DG);mobility;nanowire (NW);poly-Si;thin-film transistor (TFT)
公開日期: 1-四月-2010
摘要: In this paper, we characterize and compare the characteristics of a poly-Si nanowire (NW) device with independent double-gated configuration under different operation modes. In the device, the tiny NW channels are surrounded by an inverted-T-shaped gate and a top gate. It is found that the device under double-gate (DG)mode exhibits significantly better performance with respect to the two single-gate (SG) modes, as indicated by a higher current drive than the combined sum of the two SG modes and a smaller subthreshold swing of less than 100 mV/dec. Origins of such improvement have been identified to be due to the elimination of the back-gate effect as well as an enhancement in the effective mobility with the DG operation.
URI: http://dx.doi.org/10.1109/TED.2010.2041857
http://hdl.handle.net/11536/5605
ISSN: 0018-9383
DOI: 10.1109/TED.2010.2041857
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 57
Issue: 4
起始頁: 905
結束頁: 912
顯示於類別:期刊論文


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