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dc.contributor.authorTang, Ying-Tsanen_US
dc.contributor.authorLin, Kao-Chinen_US
dc.contributor.authorChuu, Der-Sanen_US
dc.date.accessioned2014-12-08T15:07:09Z-
dc.date.available2014-12-08T15:07:09Z-
dc.date.issued2010-04-01en_US
dc.identifier.issn0038-1098en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.ssc.2010.01.007en_US
dc.identifier.urihttp://hdl.handle.net/11536/5617-
dc.description.abstractWe study the electronic transport in the presence of electron-phonon interaction (EPI) for a molecular electronic device. Instead of mean field approximation (MFA), the related phonon correlation function is conducted with the Langreth theorem (LT). We present formal expressions for the bandwidth of the electron's spectral function in the central region of the devices, such as quantum dot (QD), or single molecular transistor (SMT). Our results show that the out-tunneling rate depends on the energy, bias voltage and the phonon field. Besides, the predicted conductance map, behaving as a function of bias voltage and the gate voltage, gets blurred at the high bias voltage region. These EPI effects are consistent with the experimental observations in the EPI transport experiment. (C) 2010 Elsevier Ltd. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectTunnelingen_US
dc.subjectElectron-phonon interactionsen_US
dc.subjectElectronic transporten_US
dc.titleBias-dependent bandwidth of the conductance in the presence of electron-phonon interactionen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.ssc.2010.01.007en_US
dc.identifier.journalSOLID STATE COMMUNICATIONSen_US
dc.citation.volume150en_US
dc.citation.issue15-16en_US
dc.citation.spage799en_US
dc.citation.epage803en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000276669300024-
dc.citation.woscount0-
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