利用電荷幫浦技術萃取金氧半場效電晶體參數的新方法

Abstract

在本文中, 對於電荷幫浦技術做了充份的研究, 並出一個精確的解析模型 。藉由導出的解析式，我們可以將電子和電洞的捕獲截面分別萃取出來。 使用導出的捕獲截面模型，我們可以計算出和實驗相符合的曲線。這是第 一次經由理論計算出的電荷幫浦電流曲線與實驗結果相吻合。除此之外， 我們也將電荷幫浦技術應用在金氧半場效電晶體之有效通道長度的萃取。 此方法相較於電流- 電壓法，有不受限於元件結構的優點。然而，此方法 須用二維元件模擬器來協助萃取最後的精確結果。另外，本文對萃取從存 在於能隙內的界面狀態密度分佈亦做了相當的改善。 In this paper, a detail study on the charge-pumping tecnique is made and an accurate analytical model is derived. By means of the derived analytic equations, we can extract the electron and hole capture cross sections seperately. Using the capture-cross- section model derived, the calculated charge-pump ing current curves are in good agreement with the experimental data. It's the first time that the theoretical charge-pumping curves fit the experimental results so well. Besides, a new technique is developed to extract the effective channel length. Comparing to the conventional I-V method, the developed method is simple, accurate and suitable to any kind of MOSFET's. However, a 2-D numerical device simulator is needed to derived the final result. In addition, an improved extraction technique for the interface-states density distribution in the forbidden gap is also derived in this paper.