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dc.contributor.authorChin, Aen_US
dc.contributor.authorChen, WJen_US
dc.contributor.authorLin, BCen_US
dc.contributor.authorKao, JHen_US
dc.contributor.authorTsai, Cen_US
dc.contributor.authorHuang, JCMen_US
dc.date.accessioned2014-12-08T15:01:49Z-
dc.date.available2014-12-08T15:01:49Z-
dc.date.issued1997-05-01en_US
dc.identifier.issn0013-4651en_US
dc.identifier.urihttp://dx.doi.org/10.1149/1.1837623en_US
dc.identifier.urihttp://hdl.handle.net/11536/571-
dc.description.abstractSilicon oxide has been grown in a low pressure furnace using N2O. An atomically fiat SiO2 (N2O)/Si interface, as determined by high resolution transmission electron microscopy, has been achieved by desorbing the native oxide in situ for oxide thicknesses 11 to 38 Angstrom. The thickness variation of a 20 Angstrom N2O-oxide, grown on a 4 in. substrate <1 Angstrom. The excellent uniformity is attributed to the increased mean-free path of N2O molecules in the low pressure environment. Since only one Si plane was distorted beneath the N2O-oxide/Si interface, this suggests that thermal stress is not the limiting factor for obtaining an atomically smooth interface.en_US
dc.language.isoen_USen_US
dc.titleUltrathin N2O-oxide with atomically flat interfacesen_US
dc.typeArticleen_US
dc.identifier.doi10.1149/1.1837623en_US
dc.identifier.journalJOURNAL OF THE ELECTROCHEMICAL SOCIETYen_US
dc.citation.volume144en_US
dc.citation.issue5en_US
dc.citation.spageL97en_US
dc.citation.epageL99en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
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