完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chin, A | en_US |
dc.contributor.author | Chen, WJ | en_US |
dc.contributor.author | Lin, BC | en_US |
dc.contributor.author | Kao, JH | en_US |
dc.contributor.author | Tsai, C | en_US |
dc.contributor.author | Huang, JCM | en_US |
dc.date.accessioned | 2014-12-08T15:01:49Z | - |
dc.date.available | 2014-12-08T15:01:49Z | - |
dc.date.issued | 1997-05-01 | en_US |
dc.identifier.issn | 0013-4651 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1149/1.1837623 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/571 | - |
dc.description.abstract | Silicon oxide has been grown in a low pressure furnace using N2O. An atomically fiat SiO2 (N2O)/Si interface, as determined by high resolution transmission electron microscopy, has been achieved by desorbing the native oxide in situ for oxide thicknesses 11 to 38 Angstrom. The thickness variation of a 20 Angstrom N2O-oxide, grown on a 4 in. substrate <1 Angstrom. The excellent uniformity is attributed to the increased mean-free path of N2O molecules in the low pressure environment. Since only one Si plane was distorted beneath the N2O-oxide/Si interface, this suggests that thermal stress is not the limiting factor for obtaining an atomically smooth interface. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Ultrathin N2O-oxide with atomically flat interfaces | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1149/1.1837623 | en_US |
dc.identifier.journal | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | en_US |
dc.citation.volume | 144 | en_US |
dc.citation.issue | 5 | en_US |
dc.citation.spage | L97 | en_US |
dc.citation.epage | L99 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
顯示於類別: | 期刊論文 |