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dc.contributor.author李建昌en_US
dc.contributor.authorLi Jiann Changen_US
dc.contributor.author謝正雄en_US
dc.contributor.authorShie Jin Shownen_US
dc.date.accessioned2014-12-12T02:11:39Z-
dc.date.available2014-12-12T02:11:39Z-
dc.date.issued1993en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT820123020en_US
dc.identifier.urihttp://hdl.handle.net/11536/57651-
dc.description.abstract本研究係利用矽之異方性蝕刻技術,在矽晶片上製作一種具有四十五度斜 面之U型槽,並利用此種氧化犧牲法,使斜面更平整至光學程度,在此結 構上黏置邊射型半導體雷射,使其達到垂直發射的功能。此種垂直發射之 結構十分簡化雷射包裝的方式,有利於自動化的優點。 This thesis is to study a novel technology of the fabrication of a vertical emitting semiconductor laser.this technique is a combination of an edge emitting semiconductor laser and a silicon micro-machining U-groove which has forty-five degree mirror-like oblique planes made by oxidation-smooth method.With the edge emitting semiconductor laser packaged on the bottom of the U-groove,reflected light will be perpendicular to the incident light,that is,as a vertical emitting semiconductor laser.This vertical emitting structure with simplifying laser package has the advantage for automation.zh_TW
dc.language.isozh_TWen_US
dc.subject矽微加工;氧化犧牲法zh_TW
dc.subjectsilicon micromachining;oxidation-smooth methoden_US
dc.title垂直發射的雷射封裝結構之製作zh_TW
dc.titleFabrication of the package of vertical emitting semiconductor laseren_US
dc.typeThesisen_US
dc.contributor.department光電工程學系zh_TW
Appears in Collections:Thesis