利用高真空蒸鍍及氣體蒸鍍法製作硫化鎘薄膜及其光學性質的量測

Abstract

本文利用高真空蒸鍍及氣體蒸鍍法,從事製作高方向性(002)硫化鎘薄膜的 研究.在此我們使用Corning's7059玻離片及p-型(100)的矽晶片來做為室 溫下蒸鍍薄膜的基板.此薄膜結晶顆粒的大小約在 500A到1000A之間,薄膜 厚度約在1000A以上.我們並利用X-射線繞射及掃瞄式電子顯微鏡研究薄膜 的晶體及表面結構.我們也在不同溫度下量測這些薄膜的拉曼光譜以及光 激冷光譜,並分析這些光譜中譜峰位置與薄膜與溫度的關係. Thin films of high orientation cadmium sulfide were fabricated by high vacuum thermal evaporation technique and gas evaporation technique. Two types of substrates, Corning's 7059 glass and(100) p-type silicon,were used to deposit the films at room temperature.The grain sizes of these films were found in a range of 500-1500 A in adiameter.The as-deposited films were characterized by X-ray diffraction(XRD) and scanning electron microscopy (SEM).Raman scattering spectra and photoluminescence( PL) spectra for various temperature were measured. Temperature dependence of the peaks positions of Raman scattering spectra and PL spectra were studied and compared with the available results of previous works.