完整後設資料紀錄
DC 欄位語言
dc.contributor.author劉國智en_US
dc.contributor.authorKuo-Chih Liuen_US
dc.contributor.author陳衛國en_US
dc.contributor.authorDr. Wei-Kuo Chenen_US
dc.date.accessioned2014-12-12T02:12:03Z-
dc.date.available2014-12-12T02:12:03Z-
dc.date.issued1993en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#NT820429018en_US
dc.identifier.urihttp://hdl.handle.net/11536/57982-
dc.description.abstract本實驗主要運用有機金屬氣相磊晶法成長 In0.53Ga0.47As 和 AlAs0.56 Sb0.44 化合物半導體薄膜。成長 In0.53Ga0.47As 所使用的反應分子源 為 TMIn、TEGa、AsH3,所使用的基板為 InP。成長 In0.53Ga0.47As 所 使用的 V/III 值由 100-170 ,Xv(Sb)值從 0.40-0.80,長晶溫度為 550-600℃。由實驗發現,V/III 值為 123 ,Xv(In) 為 0.68 時,可成 長出晶格與 InP 匹配的 In0.53Ga0.47As 晶體。在 600℃時,長晶效率 約 3000-3500 um/mole。 Hall 量測,電子遷移速率為 10200 cm^2/V*s ,載子濃度為 5*10^16 cm^-3,由雙晶繞射 X-ray 測得 InP 和 In0.53 Ga0.47As 的合成半高寬約只有 92 arcsec。成長 AlAs0.56Sb0.44 所使 用的分子源為 TMAl、TMSb、AsH3 。所使用的 V/III 值由 1.2-5,Xv( Sb) 從 0.2-0.80,磊晶溫度由 500-725℃,發現磊晶厚度在 620℃ 以上 時,磊晶效率和溫度無關。在 620℃ 以下時隨溫度下降而磊晶效率變小 ,但即使在 550℃,也有約 4200 um/mole的磊晶效率。在固定 V/III 值 為 3.0 ,Xv(Sb) 為 0.60 時,發現固相中的 Sb 比例會隨磊晶溫度的下 降而升高。固定長晶溫度 550℃, V/III 值由 5.0-1.2,固相中的 Sb 會隨 V/III 值下降而升高。並使用 TBAs 當 As 的分子源,比較和 AsH3 當 As 分子源成長 AlAs0.56Sb0.44,並探討其原因。另外,利用熱 力學來預估實驗的結果,並利用熱力學的結果大約估計 TMAl 和 AsH3 的 分解率為溫度的函數。 We use atmospheric pressure metalorganic chemical vapor deposition (MOCVD) system to grow AlAs0.56Sb0.44 and In0.53 Ga0.47As. Metalorganic sources TMAl, TMSb, and TBAs or AsH3 were used as precursors of Al, Sb, and As, respectively. Metalorganic sources TEGa, TMIn and AsH3 were used as precursors of Ga, In, and As, respectively. The growth efficiency is about 3000-3500 um/mole at 600℃. From the experiments, we find when the V/III=123, Xv(In)=0.68, and growth temperature is 600℃, we can obtain InGaAs film lattice matched to InP. The electron mobility as high as 10200 cm^2/V*s from Hall measurement at room temperature, and the carrier concentration is 5*10^16 cm^-3.Fromouble crystal X-ray measurement, we can get 92 arcsec of FWHM. For growing AlAsSb, the growth mechanism is surface kinetically controlled below 620℃ when we use AsH3 as As precursor. For V/III=3.0 and Xv( Sb)=0.60, we find the result of Sb solid composition will decrease as the temperature increases. When we fix growth temperature at 550℃ and change V/III ratio from 5.0 to 1.2, we can get solid composition of Sb will reduce when V/III ratio expands. We also used TBAs as As precursor to study the difference with AsH3 works. Besides, with the thermodynamics calculation we predict the AsH3 and TMAl decomposition rate.zh_TW
dc.language.isozh_TWen_US
dc.subject有機金屬氣相磊晶法;砷化銦鎵;砷銻化鋁zh_TW
dc.subjectMOCVD;InGaAs;AlAsSben_US
dc.title有機金屬氣相磊晶法成長砷化銦鎵和砷銻化鋁薄膜zh_TW
dc.titleMetalorganic Chemical Vapor Deposition of AlAsSb And InGaAs attice Matched to InPen_US
dc.typeThesisen_US
dc.contributor.department電子物理系所zh_TW
顯示於類別:畢業論文