標題: 靜態隨機存取記憶體之薄膜電晶體技術之研究
Study of the Technology of Thin Film Transistors for SRAM's
作者: 許相如
Shang-Ru Sheu
鄭晃忠
Huang-Chung Cheng
電子研究所
關鍵字: 快速高溫回火;再結晶;變壓耦合電漿;氫化;汲極補償結構.;RTA;Recrystallization;TCP;Hydrogenation; Offset-Drain Structure.
公開日期: 1993
摘要: 純粹快速高溫回火處理是有潛能取代長時間爐管回火做為非晶矽再結晶時 的處理方法, 同時由變壓耦合電漿產生的氫氣電漿可以更有效的填補存在 晶粒間的載子捕捉中心. 整合這些製程條件, 配合汲極補償結構, 即可容 易以合乎經濟效益的方式生產具有高 開啟/關閉 電流比 的薄膜電晶體. It has been found that pure RTA treatment has the potential to replace the furnace annealing for the method of recrystallization of the amorphous silicon, and that the hydrogenation plasma produced by TCP could more effectively passivate the trap centers in the grain boundaries. Integrating these processing conditions with the offset-drain structure, it is easy to economically the TFT's with high on/off-current ratio.
URI: http://140.113.39.130/cdrfb3/record/nctu/#NT820430008
http://hdl.handle.net/11536/58004
顯示於類別:畢業論文