| 標題: | 氟與雜質對矽化鎢製程的影響 The roles of fluorine and dopants in W-polycide processes |
| 作者: | 許順良 Xu, Shun Liang 張俊彥 林茂雄 Zhang, Jun Yan Lin, Mao Xiong 電子研究所 |
| 公開日期: | 1993 |
| URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT822430005 http://hdl.handle.net/11536/58517 |
| Appears in Collections: | Thesis |
- DIRECT EVIDENCE OF GATE OXIDE THICKNESS INCREASE IN TUNGSTEN POLYCIDE PROCESSES / HSU, SL;LIU, LM;LIN, MS;CHANG, CY
- EFFECT OF FLUORINE INCORPORATION ON THE THERMAL-STABILITY OF PTSI/SI STRUCTURE / TSUI, BY;TSAI, JY;WU, TS;CHEN, MC
- 二矽烷複晶矽薄膜及四氟化碳電漿預處理技術在製備薄氧化層之研究 / 李介文;Jam Wem Lee;李崇仁;雷添福;Chung_Len Lee
- INVESTIGATION ON THE DISTRIBUTION OF FLUORINE AND BORON IN POLYCRYSTALLINE SILICON SILICON SYSTEMS / CHEN, TP;LEI, TF;CHANG, CY;HSIEH, WY;CHEN, LJ
- 使用沉積矽化鎢與複晶矽和非晶矽結構形成之複晶矽化鎢閘極之研究 / 廖修漢;Shiou-Hann Liaw;雷添福;Tan-Fu Lei
- 氟離子佈植對低溫多晶矽薄膜電晶體之研究 / 楊哲育;Che-Yu Yang;張俊彥;張鼎張;Chun-Yen Chang
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