標題: 利用超高真空化學氣相沉積成長P型通道矽鍺調變攙雜及δ攙雜場效電晶體
P-Channel SiGe Modulation-Doped and δ-Doped Field Effect Transistor Grown by UHV/CVD
作者: 林寶全
Bao-Chyuan Lin
張俊彥
Chun-Yen Chang
電子研究所
關鍵字: 矽鍺;調變攙雜;δ-攙雜.;SiGe;Modulation-Doped;Delta-Doped.
公開日期: 1994
摘要: 本論文中,我們已成功的利用超高真空化學氣相沉積成長出矽與矽鍺異質 接面,利用Shubnikov de Hass (SdH) 分析量測,可證實矽與矽鍺異質接 面有二維電洞雲存在,並可得到其電洞遷移率在0.35 K時為11,000 cm2 V-1s-1,且其電洞濃度為3.8e11 cm-2 。我們並研製5微米閘極之p型通道 矽與矽鍺調變攙雜場效電晶體(MODFET),其互導可達9.25 mS/mm。另外, 我們研製5微米閘極δ攙雜矽鍺金半場效電晶體(MESFET),其互導可 達2.33 mS/mm。 In this thesis , we have sucessfully grown Si/SiGe heterojunction . The existence of the 2DHG in the Si/SiGe heterojunction is confirmed by the Shubnikov de Hass measurement . The mobility is found to be 11,000 cm2V-1s-1 and sheet carrier density is 3.8e11 cm-2 at 0.35 K . We have also fabricated p-channel Si/SiGe MODFET and boron delta-doped SiGe MESFET , the extinsic transconductance can reach 9.25 mS/mm and 2.33 mS/mm , respectively .
URI: http://140.113.39.130/cdrfb3/record/nctu/#NT830430065
http://hdl.handle.net/11536/59254
Appears in Collections:Thesis