標題: Electrical characteristics of an organic bistable device using an Al/Alq(3)/nanostructured MoO(3)/Alq(3)/p(+)-Si structure
作者: Chang, Tzu-Yueh
Cheng, You-Wei
Lee, Po-Tsung
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
公開日期: 25-Jan-2010
摘要: The electrical properties of a device with an Al/Alq(3)/nanostructured MoO(3)/Alq(3)/p(+)-Si structure were investigated for organic resistance switching memories. The conductance of the device can be electrically switched to either high conductance or low conductance. The bistable switching of the device is attributed to the MoO(3) nanoclusterlike layer interposed between the Alq(3) thin films. When the device was switched to high conductance, a space-charge field dominated carrier transportation of the device. The space-charge field was resulted from charges trapped in the MoO(3) nanoclusterlike layer. Both retention measurement and write-read-erase-read cycles of the device are also provided.
URI: http://dx.doi.org/10.1063/1.3299265
http://hdl.handle.net/11536/5952
ISSN: 0003-6951
DOI: 10.1063/1.3299265
期刊: APPLIED PHYSICS LETTERS
Volume: 96
Issue: 4
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