| 標題: | n型氮化鎵之金屬接觸及其金屬:半導體場效應電晶體之研製 Metal contacts to n-type GaN and fabrication of MESFETs |
| 作者: | 郭瑞俊 Guo, Rui Jun 馮明憲 Feng, Ming Xian 材料科學與工程學系 |
| 公開日期: | 1994 |
| URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT832159010 http://hdl.handle.net/11536/59674 |
| 顯示於類別： | 畢業論文 |
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- Backside copper metallization of GaAs MESFETs using TaN as the diffusion barrier / Chen, CY;Chang, EY;Chang, L;Chen, SH
- The performance of GaAs power MESFET's using backside copper metallization / Chen, CY;Chang, L;Chang, EY;Chen, SH;Lin, YC
- A PSEUDOMORPHIC GAINP/INP MESFET WITH IMPROVED DEVICE PERFORMANCE / LIN, KC;HSIN, YM;CHANG, CY;CHANG, EY
- A design strategy for short gate length SOI MESFETs / Hou, CS;Wu, CY
- High-efficiency and low-distortion directly-ion-implanted GaAs power MESFET's for digital personal handy-phone applications / Lai, YL;Chang, EY;Chang, CY;Tai, MC;Liu, TH
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