Skip navigation
  • Browse
      • Publications

      • Books
      • Articles
      • Conferences Paper
      • Research Plans
      • Thesis
      • Patents
      • Technical Report
      • Digital Teaching Material

      • Open Course Ware
      • Thematic Works

      • Cast Net
      • ARCH NCTU
      • MingZhu
      • Activities

      • Library Week
      • Research Guide Camp
      • Graduation Ceremony
      • Opening Ceremony
      • Digital Archives

      • Yuyu Yang Digital Art Museum
      • Kuan Digital Art Museum
      • Historical News

      • NCTU e-News
      • POiNT
      • NYCU E-NEWS
      • NYCU E-NEWS
      • YMNEWS
      • Campus Publications

      • NCTU Press
      • Technology Law Review
      • Journal of Management and System
      • Hakka People
      • Global Hakka Studies
      • Du:Chuan Bo Yu Ke Ji
      • Journal of Cyber Culture and Information Society
      • CS @ NCTU
      • Chiao Da Mangement Review
      • Mathematics, Science, History, and Culture
      • Science Bulletin National Chiao-Tung University
      • The Journal of National Chiao Tung University
      • Chiao Tung Youth Club
      • Journal of Chiao Da Physical Education
      • 陽明神農坡彙訊
      • Center for Institutional Research and Data Analytics Newsletter
      • Renjian Thought Review
      • Router: A Journal of Cultural Studies
      • 萌牙會訊
      • Inter-Asia Cultural Studies
      • 醫學院年報
      • 醫學院季刊
      • iPharm NYCU Journal
      • Sustainable Development Annual Report
      • Open House
      • School Yearbooks

      • Yearbook
  • Items
    • Issue Date
    • Author
    • Title
    • Subject
  • Researchers
  • English
  • 繁體
  • 简体
  1. You are Here:National Chiao Tung University Institutional Repository
  2. Publications
  3. Thesis

Title: n型氮化鎵之金屬接觸及其金屬:半導體場效應電晶體之研製
Metal contacts to n-type GaN and fabrication of MESFETs
Authors: 郭瑞俊
Guo, Rui Jun
馮明憲
Feng, Ming Xian
材料科學與工程學系
Issue Date: 1994
URI: http://140.113.39.130/cdrfb3/record/nctu/#NT832159010
http://hdl.handle.net/11536/59674
Appears in Collections:Thesis


Related Contents
  • IR@NYCU
  • CrossRef
  • N型氮化鎵之歐姆接觸及其金屬-半導體場效電晶體之製作 / 林其淵;Lin, Chie-Iuan;馮明憲;Feng Ming-Shiann
  • Backside copper metallization of GaAs MESFETs using TaN as the diffusion barrier / Chen, CY;Chang, EY;Chang, L;Chen, SH
  • The performance of GaAs power MESFET's using backside copper metallization / Chen, CY;Chang, L;Chang, EY;Chen, SH;Lin, YC
  • A PSEUDOMORPHIC GAINP/INP MESFET WITH IMPROVED DEVICE PERFORMANCE / LIN, KC;HSIN, YM;CHANG, CY;CHANG, EY
  • A design strategy for short gate length SOI MESFETs / Hou, CS;Wu, CY
  • High-efficiency and low-distortion directly-ion-implanted GaAs power MESFET's for digital personal handy-phone applications / Lai, YL;Chang, EY;Chang, CY;Tai, MC;Liu, TH
Loading...

Items with full text/Total items : 82797/160632 (52%)
Visitors : 0      Online Users : 1

Copyright  ©  2002-2025   - Feedback - 
Powered by DSpace - Sitemap -  GitHub -  Sign on to:

Top
引用(Cite)
APA 郭., Guo, R. Jun, 馮., & Feng, M. Xian (1994). n型氮化鎵之金屬接觸及其金屬:半導體場效應電晶體之研製. http://hdl.handle.net/11536/59674.
Bibtex @article{郭瑞俊 and Guo1994,
    title={n型氮化鎵之金屬接觸及其金屬:半導體場效應電晶體之研製},
    author={郭瑞俊 and Guo, Rui Jun and 馮明憲 and Feng, Ming Xian},
    journal={http://hdl.handle.net/11536/59674},
    year={1994},
    url={https://ir.lib.nycu.edu.tw/handle/11536/59674},
}