標題: MOCVD成長GaAs太陽電池研究
The research on gaAs solar cell grown by MOCVDzeng
作者: 葉庭弼
YE, TING BI
李威儀
LI, WEI YI
物理研究所
關鍵字: 砷化鎵;太陽電池;有機金屬氣相磊晶;物理;有機金屬氣相磊晶法;GaAs;Solar Cell;MOCVD;OMVPE;PHYSICS
公開日期: 1994
摘要: 實驗中使用有機金屬氣相磊晶法成長太陽電池結構,我們發現:製程設計良 好與否對太陽電池的效率影響極大,我們並且針對表層厚度,柵狀電極的設 計,底層載子濃度,鋁砷化鎵層作用,以及抗反射層的作用加以討論 We tried to construct GaAs Solar Cell by MOCVD and find that the process play an important role in the performance of a solar cell. We then discuss the effect of thickness of p-type layer, design of grid, carrier concentration of Base layer, AlGaAs window layer, and AR Coating.
URI: http://140.113.39.130/cdrfb3/record/nctu/#NT834198002
http://hdl.handle.net/11536/59885
顯示於類別:畢業論文