| 標題: | 砷離子佈植砷化鎵超快光電特性及其應用之研究 = Arsenic-implanted GaAs |
| 作者: | 林恭如 潘犀靈 光電工程學系 |
| 公開日期: | 1995 |
| URI: | http://140.113.39.130/cdrfb3/record/nctu/#NT846124001 http://hdl.handle.net/11536/61350 |
| 顯示於類別： | 畢業論文 |
- Multi-energy arsenic-ion-implanted GaAs photoconductive switches for ultrafast and millimeter wave applications / Pan, CL
- The dynamics of thermal annealing in arsenic-ion-implanted GaAs / Chen, WC;Lin, GR;Chang, CS
- 單一與多重佈值砷離子砷化鎵光導元件之研究 / 李彥志;YenChih Lee;潘犀靈;王興宗;Ci-Ling Pan
- 砷離子佈植砷化鎵薄膜在不同退火條件下其材料結構與電性分析 / 李守忠;Lee, Shou-Chung;張振雄;Chen-Shiung Chang
- Picosecond responses of low-dosage arsenic-ion-implanted GaAs photoconductors / Lin, GR;Pan, CL
- Arsenic-implanted GaAs: An alternative material to low-temperature-grown GaAs for ultrafast optoelectronic applications / Pan, CL;Lin, GR
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