The impact of microstructure end defects on moisture resistance of novel SiO(x)N(y) passivation layer for OLED applications

doi:10.1002/9780470692325.ch27

標題:	The impact of microstructure end defects on moisture resistance of novel SiO(x)N(y) passivation layer for OLED applications
作者:	Chen, Yi-Jen Hsu, Kuo-Yuan Chen, Yin-Ying Su, Cheng-Feng Tang, Shuenn-Jiun Leu, Jihperng 材料科學與工程學系 Department of Materials Science and Engineering
公開日期:	1-Jan-2007
摘要:	The effects of grain boundaries in passivation layer and AI hillocks on moisture resistance were studied for SiO(x)N(y) thin films deposited by modified Ar ion beam evaporation. AI hillocks are attributed to be the culprit for moisture permeation, while its density and height dictate the required number layers of passivation for OLED applications.
URI:	http://dx.doi.org/10.1002/9780470692325.ch27 http://hdl.handle.net/11536/6146
ISBN:	978-957-28522-4-8
ISSN:
DOI:	10.1002/9780470692325.ch27
期刊:	IDMC'07: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2007
Volume:
Issue:
起始頁:	280
結束頁:	283
Appears in Collections:	Conferences Paper