反應式磁控濺鍍二氧化釕之成長與性質

Abstract

在本論文中,我們研製利用直流濺鍍成長之二氧化釕薄膜之微結構,電性 及電阻溫度係數性質.在直流濺鍍過程中,改變影響濺鍍之變數包括氧分 壓,腔體之總壓,基板溫度以及激發之功率來探討其對薄膜成長之影響.另 外,退火溫度,壓力以及氣體種類也對薄膜造成影響.從掃描式電子顯微鏡 之觀測我們可以發現高溫成長之薄膜能使晶體顆粒大小變大並促進膜之均 勻性.另外,從晶格分析中可知,成長溫度對二氧化釕薄膜之結晶性有很大 之關聯.且以原子力顯微鏡分析不同溫度成長之表面形態.本實驗中以二氧 化釕薄膜電阻之電性與溫度電阻係數為主要研究目標.於濺鍍變數中精確 的控制氧分壓及濺鍍時基板之溫度即可成功的成長近似零電阻溫度係數以 及高電阻率之二氧化釕薄膜電阻. this study, we investigate the microstructure, electrical and thermal properties of RuO2 thin-film resistor grown on t包括 氧分壓,腔體之總壓,基板溫度DC magnetron sputtering. Processing variables in DC sputteringincluding oxygen partial pressure , total pressure ,substrate temperature,annealing gas species, pressure,annealing temperature and exciation powerduring the growth were changed to explore the effects on the properties of grown film. On the basis of SEM observation ,we found high temperature depositionprocess can improve the uniformity of the films and enlarge grain size.From X-ray analysis, the variation of the structure of ruthenium dioxidewith deposition temperature was examined by X-ray diffraction. Moreover,surface morphologies of ruthenium dioxide thin films at different temprature were also characterized by atomic force microscopy. What we emphasize was placed on the characteristics of electrical and TCR properties of the films. By precisely controlling oxygen partial pre-ssure abd deposition temperature, the near-zero TCR and high sheet resis-tance RuO2 thin film resistors were successfully fabricated.