分裂閘極式可抹除編寫記憶晶胞之編寫能力特性研究

Abstract

分裂閘極式之熱電子注入乃是利用弱閘控區域之高電場,此不同於傳統 堆疊閘極式之元件,其熱電子注入乃是接近汲極區.且在電路路設計上,分 裂閘極式不會如堆疊除 The hot electron injection of split gate EEPROM cell is taken advantage of the high electric field result from weak- gate-control region. It is different from the conventional stack gate device which hot electron injection is nearthe drain side. And in circuit design, split gate type don't have over- eraseproblem but stack gate type do have this concern. In this study, we have some programming capacity study about split gatecell in differnt floating gate length, control gate length, source junction depth and misalign of control/floating gate. And we find the relation ofprogramming capacity and length are all like a bell-shape. So,the device engineer should make a robust dimension design base on the reguested programeffeciency specification, cell area and the stability of process controlwindow.