高功率半導體雷射製作及高頻雷射包裝之量測

Abstract

在本篇文章中，我們介紹以分子束磊晶和質子佈植所做的寬面積波長808 n的單量子井AlGaAs / GaAs半導體雷射。對一個長1m寬100mm的共振腔而 言，其臨界電流為450 mA 。在1500 mA的脈衝電流時，室溫光的輸出可 達750 mW 。又將面射型半導體雷射陣列黏合在C型基座上-在室溫時臨界 電流為60 mA ，在500 mA時可達50 mW的連續光波操作。另外，又量測了 數個不同包裝的高頻雷射，陶瓷包裝有大於1 GHz的頻寬。 In this thesis, we report the fabrication of broad area high power single quantum well AlGaAs / GaAs graded index seperate confinement ( GRINSCH SQW ) lasers by proton implication and molecular beam epitaxy techniques. Threshold current of 450 mA is obtained for a 1mm long and 100m m wide cavity. At 1.5 A injection, laser output reaches 750 mW at room temperature pulsed condition. We also die bond the SEL array on the C-block. At the 500 mA injection, the lasers output reach 50 mW at room temperature CW condition. We also measure the frequency bandwidth of several different packages of the SEL. The SEL with ceramics package have the best bandwidth ( over 1 GHz ) .