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  1. You are Here:National Chiao Tung University Institutional Repository
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標題: 氮化鎵低壓氣相磊晶成長及特性分析
Low pressure vapor phase epitaxial growth and characterization of GaN
作者: 郭政達
馮明憲
電子研究所
公開日期: 1996
URI: http://140.113.39.130/cdrfb3/record/nctu/#NT856430104
http://hdl.handle.net/11536/62538
Appears in Collections:Thesis


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  • Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy / Fu, Yi-Keng;Lu, Yu-Hsuan;Jiang, Ren-Hao;Chen, Bo-Chun;Fang, Yen-Hsiang
  • 氫化物氣相磊晶法成長氮化鎵 / 趙偉清;Wei-Ching Chao;李威儀;Wei-I Lee
  • 以氫化物氣相磊晶法開發III-V族氮化物基板( II ) / 李威儀;LEE WEI-I
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