深次微米逆離子佈植p通道金氧半場效電晶體之參數萃取及元件模式的新技術

Full metadata record

DC Field	Value	Language
dc.contributor.author	吳健民	en_US
dc.contributor.author	吳慶源	en_US
dc.date.accessioned	2014-12-12T02:18:22Z	-
dc.date.available	2014-12-12T02:18:22Z	-
dc.date.issued	1996	en_US
dc.identifier.uri	http://140.113.39.130/cdrfb3/record/nctu/#NT856430117	en_US
dc.identifier.uri	http://hdl.handle.net/11536/62552	-
dc.language.iso	en_US	en_US
dc.title	深次微米逆離子佈植p通道金氧半場效電晶體之參數萃取及元件模式的新技術	zh_TW
dc.title	= New techniques for parameter extraction and device models of deep-submicrometer counter-implanted p-MOSFET's	en_US
dc.type	Thesis	en_US
dc.contributor.department	電子研究所	zh_TW
Appears in Collections:	Thesis