標題: | Improved Radio Frequency Power Characteristics of Complementary Metal-Oxide-Semiconductor-Compatible Asymmetric-Lightly-Doped-Drain Metal-Oxide-Semiconductor Transistor |
作者: | Chang, Tsu Kao, Hsuan-Ling Chen, Y. J. Chin, Albert 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2010 |
摘要: | We have characterized and modeled the radio frequency (RF) power performance of a 0.18 mu m asymmetric-lightly-doped-drain metal-oxide-semiconductor field-effect transistor (LDD MOSFET). In comparison with the conventional 0.18 mu m MOSFET, this asymmetric-LDD device shows a larger power density of 0.54 W/mm, and 8 dB better adjacent channel power ratio (ACPR) linearity at 2.4 GHz from the improved twice DC breakdown voltage of 6.9 V. These significant improvements of RF power performance in the asymmetric-LDD transistor are important for the medium RF power amplifier application. (C) 2010 The Japan Society of Applied Physics |
URI: | http://hdl.handle.net/11536/6275 http://dx.doi.org/10.1143/JJAP.49.034201 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.49.034201 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS |
Volume: | 49 |
Issue: | 3 |
Appears in Collections: | Articles |
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