穿透、線段、反射去埋藏法的方法

Abstract

在這份論文中﹐是發展一種叫做TRL(穿透、 線段、反射)去埋藏法的 方法。 去埋藏法的理論包含三種基本S-參數量測的架構﹐即穿透、線段 、反射和一個元件的S-參數的量測。 這個FORTRAN程式就是在TRL去埋藏 法的理論基礎下所發展出來的。測試一顆NEC71000 MESFET來確認這程式 的正確性。 做完去埋藏法後所取得元件資料非常接近NEC公司所提供的元 件資料。 利用去埋藏法作共平面波導不連續面上的量測，可以得到反 射係數，利用這個反射係數我們做了共平面波導的短路端的量測並用HP seriesIV分析其等效。 In this thesis, a so-called TRL (Through, Line, Reflection) de-embedding method is developed. The method of de-embedding includes 3 basic structure S-parameter measurements, namely, through, line and reflection, and one device S-parameter measurement. A FORTRAN program based on TRL de-embedding theory is developed. An NEC71000 MESFET is tested to verify the validity of the program. The de-embedded data are very close to the data from NEC data sheet. The program can also provide reflection coefficient data of any kind of line discontinuities such as open-end and short-end. We utilize this method to make a CPW open-end and short-end measurements, and uses HP series to model the equivalent circuits.