標題: | Terahertz emission mechanism of magnesium doped indium nitride |
作者: | Ahn, H. Yeh, Y. -J. Hong, Y. -L. Gwo, S. 光電工程學系 Department of Photonics |
公開日期: | 7-Dec-2009 |
摘要: | We report carrier concentration-dependence of terahertz emission from magnesium doped indium nitride (InN:Mg) films. Near the critical concentration (n(c) similar to 1 x 10(18) cm(-3)), the competition between two emission mechanisms determines the polarity of terahertz emission. InN: Mg with n > n(c) exhibits enhanced positive polarity terahertz emission compared to the undoped InN, which is due to the reduced screening of the photo-Dember field. For InN: Mg with n < n(c), the polarity of terahertz signal changes to negative, indicating the dominant contribution of the surface electric field due to the large downward surface band bending within the surface layer extending over the optical absorption depth. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3270042] |
URI: | http://dx.doi.org/10.1063/1.3270042 http://hdl.handle.net/11536/6317 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.3270042 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 95 |
Issue: | 23 |
結束頁: | |
Appears in Collections: | Articles |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.