標題: Stable AlGaN/GaN high electron mobility transistors with tungsten nitride gate metallisation
作者: Lu, C. -Y.
Chang, E. Y.
Huang, J. -C.
Chang, C. -T.
Lee, C. -T.
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 3-Dec-2009
摘要: An AlGaN/GaN high electron mobility transistor (HEMT) with tungsten nitride (WNx) Schottky gate fabricated on a sapphire substrate is presented. Gate forward current stress was chosen to evaluate the stability of the Schottky gate. After stress, this WNx HEMT remains stable, while the conventional Ni/Au HEMT shows performance degradation and failure. The maximum output power density from this device is 5 W/mm at 2 GHz. A combination of these findings indicates the robust performance of this WNx material and its potential as a Schottky gate for AlGaN/GaN HEMTs.
URI: http://dx.doi.org/10.1049/el.2009.1643
http://hdl.handle.net/11536/6320
ISSN: 0013-5194
DOI: 10.1049/el.2009.1643
期刊: ELECTRONICS LETTERS
Volume: 45
Issue: 25
起始頁: 1348
結束頁: U104
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