波長1.5微米砷化鋁鎵銦應力量子井分佈回授式雷射之研製

Abstract

本文主要是討論利用半導體材料砷化鋁鎵銦（AIGaInAs）作為主動層，並且以砷化錮鎵（InGaAs）作為吸光柵，經由耦合理論計算後，製作出復式耦合分佈回授式雷射（complex coupled distribution feedback laser）。在晶粒對裝後，注入連續波電流於耦合係數為30（cm-1）的分佈回授式雷射，臨界電流與輸出功率分別為19mA、29mW。當雷射輸出功率為5mW 時，測得之旁模壓抑比（side mode suppression ratio）為44dB。

we present the fabrication results of the 1.5um complex-coupled distributed feedback lasers (DFB lasers ) with a InGaAs loss grating and strained A1GaInAs multi-quantum well (MQW) active region. The device with coupling coefficient of 30 cm-1 has a CW threshold current of 19mA and a output power of 29mW. Stable single mode emission was demonstrated with a side mode suppression ratio of up to 44dB at 5mW output power. It has been found that the presence of loss-coupling strength can eliminate the mode degenercy effectively.