鋁氧氮嵌附式減光型相移圖罩之研製與模擬

Abstract

本論文重點在研究適用於193奈米微影用嵌附式減光型相移圖罩之新嵌附層材質。 以直流電漿濺鍍功率40瓦，氬氣流量40sccm，氮氣流量2sccm，氧氣流量0.1 sccm，控制通氧時間（60~80秒╱10分）沉積ALON薄漠。ALON 之折射率在1.945~2.0；消光係數在0.53~0.29。d180計算厚度為102.12~96.5奈米，在此條件下，反射率在10.5~13.3%；透射率在2.85~12.41%。 以氯氣活性離子蝕刻對ALON薄膜進行蝕刻，其蝕刻速率約3.3埃╱分，蝕刻選擇比阻劑：ALON=1:0.01~0.03，阻劑蝕刻速率過快；ALON：基材SiO2 = 0.3:1, ALON 蝕刻率過慢。氯氣不適合蝕刻，但限於實驗室設備條件，本論文未試驗其他氣體。 ALON 薄膜的抗酸鹼性不佳，浸泡在強酸或強鹼中會溶解，須改用非鹼清洗法或有機鹼清洗法。ALON 含氧，使薄臘的導電性不佳，片電阻高於80KΩ/square ，故在進行電子束直寫時，須加上導電層以減少電荷效應。 以本論文初步以ALON 改善了ALN 薄膜應用於嵌附式減光型相移圖罩反射率偏高的缺點，並探討了此薄膜之蝕刻性、抗酸鹼性與導電性。

The main objective of this thesis is to study the new embedded material for 193 nm EAPSM. Deposition of ALON thin films were carried out with DC plasma power 40 W, argon gas flow 40 sccm, nitrogen gas flow 2 sccm, oxygen gas flow 0.1 sccm and the flow time of oxygen (60~80 sec╱10min). The n of ALON is at the range of 1.945~2.0; k 0.53~0.29. The calculated d180 is 96.5 to 102.12 nm, under this thickness, R is found to be 10.5~13.3%; T 2.85~12.41%. The etch rate of ALON film with Cl2 RIE is about 3.3 A/mn selective etching ratio resitst: ALON=1:0.01~0.03, the etching of resist is too fast; ALON: substrate SiO2=0.3:1, the etching of ALON is too slow. Cl2 is unsuitable for etching, but limited by the lab facilities, other gases have not been tested in this thesis . The resistance of ALON to acid and base is not good, will be dissolved of immersed in sstrong acid or strong base, the use of organic alkali and non-alkali cleaning method is necessary. ALON has oxygen content, making the conductance no good, the sheet resistance higher than 80 kΩ/square, so when undergoing e-beam direct-write, a conductive layer must gbe added to reduce the charging effect. In this thesis, the using of ALON instead of high reflectance of ALN preliminary improved the drawback of ALN when apply to the EAPSM, this thesis also studied the properties of this film's etching, acid and base resistance, and conductance.