| Title: | Improved Light Output Power of GaN-Based Light-Emitting Diodes Using Double Photonic Quasi-Crystal Patterns |
| Authors: | Huang, Hung-Wen Lin, Chung-Hsiang Huang, Zhi-Kai Lee, Kang-Yuan Yu, Chang-Chin Kuo, Hao-Chung 光電工程學系 Department of Photonics |
| Keywords: | Gallium nitride (GaN);light-emitting diodes (LEDs);nanoimprint lithography (NIL);photonic quasi-crystal (PQC) |
| Issue Date: | 1-Nov-2009 |
| Abstract: | The enhancement of light extraction from GaN-based light-emitting diodes (LEDs) with a double 12-fold photonic quasi-crystal (PQC) structure using nanoimprint lithography is presented. At a driving current of 20 mA on a transistor-outline-can package, the light output power of an LED with a nanohole patterned sapphire substrate (NHPSS) and an LED with a double PQC structure are enhanced by 34% and 61%, compared with the conventional LED. In addition, the higher output power of the LED with the double PQC structure is due to better reflectance on NHPSS and higher scattering effect on p-GaN surface using a 12-fold PQC structure pattern. These results provide promising potential to increase the output powers of commercial light-emitting devices. |
| URI: | http://dx.doi.org/10.1109/LED.2009.2029985 http://hdl.handle.net/11536/6491 |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/LED.2009.2029985 |
| Journal: | IEEE ELECTRON DEVICE LETTERS |
| Volume: | 30 |
| Issue: | 11 |
| Begin Page: | 1152 |
| End Page: | 1154 |
| Appears in Collections: | Articles |
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- Light Extraction Efficiency Enhancement of GaN-Based Light Emitting Diodes on n-GaN Layer Using a SiO(2) Photonic Quasi-Crystal Overgrowth / Huang, H. W.;Lee, K. Y.;Huang, J. K.;Lin, C. H.;Lin, C. F.
- Efficiency Improvement of GaN-Based LEDs With a SiO2 Nanorod Array and a Patterned Sapphire Substrate / Huang, H. W.;Huang, J. K.;Lin, C. H.;Lee, K. Y.;Hsu, H. W.
- Light-Output-Power Enhancement of GaN-Based Light-Emitting Diodes on an n-GaN Layer Using a SiO2 Photonic Quasi-Crystal Overgrowth / Huang, H. W.;Huang, J. K.;Lee, K. Y.;Lin, C. F.;Kuo, H. C.
- Enhanced light output power of GaN-based vertical-injection light-emitting diodes with a 12-fold photonic quasi-crystal by nano-imprint lithography / Huang, H. W.;Lin, C. H.;Lee, K. Y.;Yu, C. C.;Huang, J. K.
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