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dc.contributor.authorLee, Yea-Chenen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorCheng, Bo-Siaoen_US
dc.contributor.authorLee, Chia-Enen_US
dc.contributor.authorChiu, Ching-Huaen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.contributor.authorLiao, Tien-Fuen_US
dc.contributor.authorChang, Chih-Sungen_US
dc.date.accessioned2014-12-08T15:08:36Z-
dc.date.available2014-12-08T15:08:36Z-
dc.date.issued2009-10-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2009.2028445en_US
dc.identifier.urihttp://hdl.handle.net/11536/6610-
dc.description.abstractAlGaInP-based metal-bonding light-emitting diodes (LEDs) with micro- and nanoscale textured surface were investigated. The device surface with microbowls and nanorods were formed by a chemical wet-etching and dry-etching technique for enhancing light-extraction purpose. The luminous intensity could be enhanced 65.8% under 20-mA current injection as compared with the plane surface LEDs. The maximum wall-plug efficiency was achieved 14.1% at 7.5-mA operation.en_US
dc.language.isoen_USen_US
dc.subjectAlGaInP light-emitting diodes (LEDs)en_US
dc.subjectlight-extraction efficiencyen_US
dc.subjectmetal bondingen_US
dc.subjectsilica nanoparticlesen_US
dc.subjectspin coatingen_US
dc.subjectsurface textureden_US
dc.titleEnhanced Light Extraction in Wafer-Bonded AlGaInP-Based Light-Emitting Diodes via Micro- and Nanoscale Surface Textureden_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2009.2028445en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume30en_US
dc.citation.issue10en_US
dc.citation.spage1054en_US
dc.citation.epage1056en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000270227600014-
dc.citation.woscount4-
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