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dc.contributor.authorChiang, Tsung-Yuen_US
dc.contributor.authorMa, Ming-Wenen_US
dc.contributor.authorWu, Yi-Hongen_US
dc.contributor.authorKuo, Po-Yien_US
dc.contributor.authorWang, Kuan-Tien_US
dc.contributor.authorLiao, Chia-Chunen_US
dc.contributor.authorYeh, Chi-Rueien_US
dc.contributor.authorChao, Tien-Shengen_US
dc.date.accessioned2014-12-08T15:08:49Z-
dc.date.available2014-12-08T15:08:49Z-
dc.date.issued2009-09-01en_US
dc.identifier.issn0741-3106en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LED.2009.2027035en_US
dc.identifier.urihttp://hdl.handle.net/11536/6729-
dc.description.abstractIn this letter, for the first time, one-time-programmable (OTP) memory fabricated on the low-temperature poly-Si p-cbannel thin-film transistor (TFT) with metal-induced lateral-crystallization channel layer and high-kappa dielectrics is demonstrated. The state of this OTP memory can be identified by the scheme of gate-induced drain leakage current measurement. The OTP-TFT memory has good electrical characteristics in terms of low threshold voltage V(th) similar to -0.78 V, excellent subthreshold swing similar to 105 mV/dec, low operation voltage, faster programming speeds, and excellent reliability characteristics.en_US
dc.language.isoen_USen_US
dc.subjectGate-induced drain leakage (GIDL)en_US
dc.subjectmetal-induced lateral crystallization (MILC)en_US
dc.subjectone-time programmable (OTP)en_US
dc.subjectthin-film transistor (TFT)en_US
dc.titleMILC-TFT With High-kappa Dielectrics for One-Time-Programmable Memory Applicationen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LED.2009.2027035en_US
dc.identifier.journalIEEE ELECTRON DEVICE LETTERSen_US
dc.citation.volume30en_US
dc.citation.issue9en_US
dc.citation.spage954en_US
dc.citation.epage956en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000269443000021-
dc.citation.woscount6-
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