標題: | Electrostatic Discharge Robustness of Si Nanowire Field-Effect Transistors |
作者: | Liu, Wen Liou, Juin J. Chung, Andy Jeong, Yoon-Ha Chen, Wei-Chen Lin, Horng-Chih 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | Electrostatic discharge (ESD);failure current I(t2);nanowire (NW) field-effect transistor;ON-state resistance |
公開日期: | 1-九月-2009 |
摘要: | Electrostatic discharge (ESD) performance of N-type double-gated Si nanowire (NW) thin-film transistors is investigated, for the first time, using the transmission line pulsing technique. The ESD robustness of these devices depends on the NW dimension, number of channels, plasma treatment, and layout topology. The failure currents, leakage currents, and ON-state resistances are characterized, and possible ESD protection applications of these devices for future NW field-effect-transistor-based integrated circuits are also discussed. |
URI: | http://dx.doi.org/10.1109/LED.2009.2025610 http://hdl.handle.net/11536/6763 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2009.2025610 |
期刊: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 30 |
Issue: | 9 |
起始頁: | 969 |
結束頁: | 971 |
顯示於類別: | 期刊論文 |