標題: Electrostatic Discharge Robustness of Si Nanowire Field-Effect Transistors
作者: Liu, Wen
Liou, Juin J.
Chung, Andy
Jeong, Yoon-Ha
Chen, Wei-Chen
Lin, Horng-Chih
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Electrostatic discharge (ESD);failure current I(t2);nanowire (NW) field-effect transistor;ON-state resistance
公開日期: 1-九月-2009
摘要: Electrostatic discharge (ESD) performance of N-type double-gated Si nanowire (NW) thin-film transistors is investigated, for the first time, using the transmission line pulsing technique. The ESD robustness of these devices depends on the NW dimension, number of channels, plasma treatment, and layout topology. The failure currents, leakage currents, and ON-state resistances are characterized, and possible ESD protection applications of these devices for future NW field-effect-transistor-based integrated circuits are also discussed.
URI: http://dx.doi.org/10.1109/LED.2009.2025610
http://hdl.handle.net/11536/6763
ISSN: 0741-3106
DOI: 10.1109/LED.2009.2025610
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 30
Issue: 9
起始頁: 969
結束頁: 971
顯示於類別:期刊論文


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