标题: | 氧含量对非晶态透明半导体铟锌锡氧薄膜电晶体特性之研究 Study on the effect of oxygen incorporation on amorphous Indium Zinc Tin Oxide transparent thin film transistors |
作者: | 刘玫诤 Liu, Mei-Jeng 刘柏村 林建中 Liu, Po-Tsun Lin, Chien-Chung 光电系统研究所 |
关键字: | 非晶态透明半导体铟锌锡氧薄膜电晶体;amorphous Indium Zinc Tin Oxide transparent thin film transistors |
公开日期: | 2013 |
摘要: | 近年来非晶态透明导电膜因具备高透光性与高电流驱动特性而受到瞩目,而为了减少材料中稀有金属的使用及提高载子迁移率的需求,我们研究了新材料indium-zinc-tin oxide(IZTO),对非晶态的IZTO电晶体进行电特性与材料特性的探讨与分析。a-IZTO 的光学能隙高达3.6eV以上,仅会吸收波段小于360nm的紫外光,在可见光的波段具有高穿透性,再者a-IZTO在制程上可达到低退火温度(300℃)与具有高载子移动率等优点,所以极有潜力成为下一代的主流显示技术。 本研究中,探讨不同氧含量的薄膜做为主动层对元件特性的影响,由实验结果得知,微量的氧能修补薄膜内的缺陷进而达到优化的效果,然而薄膜内的缺陷态却会随着氧含量的增加而增加,而载子移动率随之下降,再者,此实验中优化的元件在经过低温退火后的最高载子移动率可达15 cm2/V.s~ 20cm2/V.s。为了能进一步应用在平面显示器上,我们将此最佳化的条件成功转移于具可挠曲浅力之超薄(0.13mm)玻璃基板上,实验结果显示电晶体依旧能维持不错的元件特性(载子移动率-12~13 cm2/V.s)。a-IZTO具有高载子移动率与应用于可挠曲超薄玻璃基板之优势,此研究的发展将极具浅力。 Recently, the thin film transistors (TFTs) with transparent amorphous conductive thin film as active layer perform higher mobility and better reliability than conventional hydrogenated amorphous silicon TFT (a-Si: H TFT). In addition, the uniformity of a-IGZO TFT is also superior to low temperature polycrystalline silicon TFT (LTPS TFT). However, the usage of the rare element(Ga) and further enhancement of device mobility will be an important issue for the long-term applications. In this work, we developed new amorphous oxide semiconductor--- amorphous In-Zn-Sn-O thin film transistors (a-IZTO TFTs). We investigated the effect of oxygen incorporation on a-IZTO thin film transistors. For the devices with different oxygen flow rate incorporation, the small quantity of oxygen can repair defects and optimize the characteristic, however, the trap states increase when oxygen flow rate increases, leading to the decreasing mobility. Moreover, the mobility of the optimized devices after annealing has reached 15 cm2/V.s~ 20cm2/V.s. For the application of flat panel displays, we have successfully transferred the optimized device from Si wafer to the ultra thin glass (0.13mm) which has bending potential. Devices on ultra thin glasses have stable basic electrical characteristics and their mobilities were also comparable (12~13 cm2/V.s). With the advantages of high mobility and ultra thin glass, these results show the future application potentials of a-IZTO TFT devices on flat panel display technology. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT070058002 http://hdl.handle.net/11536/72825 |
显示于类别: | Thesis |
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