Investigation of electrostatic integrity for ultra-thin-body GeOI MOSFET using analytical solution of Poisson's equation

doi:10.1088/0268-1242/24/4/045017

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DC Field	Value	Language
dc.contributor.author	Hu, Vita Pi-Ho	en_US
dc.contributor.author	Wu, Yu-Sheng	en_US
dc.contributor.author	Su, Pin	en_US
dc.date.accessioned	2014-12-08T15:09:42Z	-
dc.date.available	2014-12-08T15:09:42Z	-
dc.date.issued	2009-04-01	en_US
dc.identifier.issn	0268-1242	en_US
dc.identifier.uri	http://dx.doi.org/10.1088/0268-1242/24/4/045017	en_US
dc.identifier.uri	http://hdl.handle.net/11536/7422	-
dc.description.abstract	The electrostatic integrity for UTB GeOI MOSFETs is examined comprehensively by using an analytical solution of Poisson's equation verified with TCAD simulation. Our results indicate that UTB GeOI MOSFETs with the ratio of channel length (L(g)) to channel thickness (T(ch)) around 5 can show comparable subthreshold swing to that of the SOI counterparts. The impact of the buried oxide thickness (T(BOX)) and back-gate bias (V(back-gate)) on the electrostatic integrity of GeOI devices is also examined.	en_US
dc.language.iso	en_US	en_US
dc.title	Investigation of electrostatic integrity for ultra-thin-body GeOI MOSFET using analytical solution of Poisson's equation	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1088/0268-1242/24/4/045017	en_US
dc.identifier.journal	SEMICONDUCTOR SCIENCE AND TECHNOLOGY	en_US
dc.citation.volume	24	en_US
dc.citation.issue	4	en_US
dc.citation.epage		en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000266052900018	-
dc.citation.woscount	4	-
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