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dc.contributor.authorLee, Chia-Enen_US
dc.contributor.authorLai, Chun-Fengen_US
dc.contributor.authorLee, Yea-Chenen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.date.accessioned2014-12-08T15:09:54Z-
dc.date.available2014-12-08T15:09:54Z-
dc.date.issued2009-03-01en_US
dc.identifier.issn1041-1135en_US
dc.identifier.urihttp://dx.doi.org/10.1109/LPT.2008.2010953en_US
dc.identifier.urihttp://hdl.handle.net/11536/7566-
dc.description.abstractIn this letter, the nitride-based thin-film light-emitting diodes (TFLEDs) with eight-fold photonic quasi-crystal (PQC) surfaces are proposed and demonstrated by a combination of wafer bonding, laser lift-off, and electron-beam lithography processes. By adopting a PQC surface, the light-output power (at 350 mA) of the PQC-TFLEDs exhibits 140% output power enhancement as compared with that of TFLEDs without a PQC surface.en_US
dc.language.isoen_USen_US
dc.subjectElectron-beam lithographyen_US
dc.subjectlaser lift-off (LLO)en_US
dc.subjectphotonic quasi-crystal (PQC)en_US
dc.subjectthin-film light-emitting diodes (TFLEDs)en_US
dc.subjectwafer bondingen_US
dc.titleNitride-Based Thin-Film Light-Emitting Diodes With Photonic Quasi-Crystal Surfaceen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/LPT.2008.2010953en_US
dc.identifier.journalIEEE PHOTONICS TECHNOLOGY LETTERSen_US
dc.citation.volume21en_US
dc.citation.issue5en_US
dc.citation.spage331en_US
dc.citation.epage333en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000264413700002-
dc.citation.woscount10-
Appears in Collections:Articles


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