Nitride-Based Thin-Film Light-Emitting Diodes With Photonic Quasi-Crystal Surface

doi:10.1109/LPT.2008.2010953

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DC 欄位	值	語言
dc.contributor.author	Lee, Chia-En	en_US
dc.contributor.author	Lai, Chun-Feng	en_US
dc.contributor.author	Lee, Yea-Chen	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Lu, Tien-Chang	en_US
dc.contributor.author	Wang, Shing-Chung	en_US
dc.date.accessioned	2014-12-08T15:09:54Z	-
dc.date.available	2014-12-08T15:09:54Z	-
dc.date.issued	2009-03-01	en_US
dc.identifier.issn	1041-1135	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LPT.2008.2010953	en_US
dc.identifier.uri	http://hdl.handle.net/11536/7566	-
dc.description.abstract	In this letter, the nitride-based thin-film light-emitting diodes (TFLEDs) with eight-fold photonic quasi-crystal (PQC) surfaces are proposed and demonstrated by a combination of wafer bonding, laser lift-off, and electron-beam lithography processes. By adopting a PQC surface, the light-output power (at 350 mA) of the PQC-TFLEDs exhibits 140% output power enhancement as compared with that of TFLEDs without a PQC surface.	en_US
dc.language.iso	en_US	en_US
dc.subject	Electron-beam lithography	en_US
dc.subject	laser lift-off (LLO)	en_US
dc.subject	photonic quasi-crystal (PQC)	en_US
dc.subject	thin-film light-emitting diodes (TFLEDs)	en_US
dc.subject	wafer bonding	en_US
dc.title	Nitride-Based Thin-Film Light-Emitting Diodes With Photonic Quasi-Crystal Surface	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LPT.2008.2010953	en_US
dc.identifier.journal	IEEE PHOTONICS TECHNOLOGY LETTERS	en_US
dc.citation.volume	21	en_US
dc.citation.issue	5	en_US
dc.citation.spage	331	en_US
dc.citation.epage	333	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000264413700002	-
dc.citation.woscount	10	-
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