标题: | 低电压制程之电荷帮浦电路设计 Design of Charge Pump Circuit in Low-Voltage CMOS Process With Consideration on Gate-Oxide Reliability |
作者: | 沈宛仪 Wan-Yi Shen 柯明道 Ming-Dou Ker 电子研究所 |
关键字: | 电荷帮浦电路;闸极氧化层可靠度;电荷传递开关;charge pump circuit;gate-oxide reliability;charge transfer switches |
公开日期: | 2005 |
摘要: | USB-OTG (On-The-Go)使得USB广泛应用于现在的产业中,而USB-OTG电路需要高电压与高电流驱动能力,在USB两用OTG设备收发器(USB On-The-Go dual-role transceiver)中,电荷帮浦电路(charge pump circuit)将被用来提供USB两用OTG设备收发器作为A设备(A-Device)时,VBUS所需之功率以及VBUS讯号。在本篇论文中,提出了两种低电压制程之电荷帮浦电路设计,除了提供高电压与高电流驱动力,亦可解决闸极氧化层可靠度的问题。 藉由使用新的时序方波以及电荷传递开关(charge transfer switches)来实现论文中所提出的两种新电路,除了能加强电荷帮浦电路每级的帮浦增益,解决闸极氧化层可靠度的问题,亦可解决旧有电路中,在方波上升或下降时间的回漏现象。 此外,当VBUS的输出负载电流变动时,其输出电压值亦受影响而随之改变,而在电荷帮浦电路中,时序方波频率的快慢,将影响输出电压的高低。于是我们藉由回授电路来控制电压控制震荡器(voltage-controlled oscillator)的频率,进而控制电荷帮浦电路的输出电压维持在我们想要的准位。 Recent applications like USB OTG (On-The-Go) require not only the high voltage level but also high current drivability. The internal charge pump circuit of the USB On-The-Go dual-role transceiver supplies VBUS power and signaling that is required by the transceiver. In this thesis, two kinds of design of charge pump circuit in low-voltage CMOS process with consideration on gate-oxide reliability are presented. The two designs of charge pump circuit can also provide high voltage level and high current drivability. In order to enhance the pumping gain of each stage, it is necessary that charge transfer switches must be used in the two proposed charge pump circuits. We use new clock control signals to implement the two kinds of charge pump circuits in thesis. This method may not only dealing the gate-oxide reliability but also solving the back leakage effect in the rise or fall time of the clock signals in the old charge pump design. In order to deal the variation of the output voltage value causing by the change of the output current loading, we will add the feedback loop to the charge pump circuit. By controlling the frequency of the voltage-controlled oscillator (VCO) in the feedback loop, we will tune the output voltage of the charge pump circuit to the voltage level we want. During the initial pumping state, the voltage value of output is very small, so we let the frequency of the voltage-controlled oscillator circuit to be fast. This method can speed up the pumping progress and let the output voltage achieve the level we want quickly. After the pumping progress, the voltage value of output might be higher than we want, so we let the frequency of the voltage-controlled oscillator circuit to be slow. This method can lower the pumping efficiency let the output voltage maintain the level we want. If the voltage value of output is lower than what we want, we will let the frequency of the voltage-controlled oscillator circuit to be fast. And we can know that this circulation will last constantly when there exist the variation of the output voltage. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT009311604 http://hdl.handle.net/11536/78074 |
显示于类别: | Thesis |
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