完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | 張懷文 | en_US |
dc.contributor.author | Huai-Wen Chang | en_US |
dc.contributor.author | 唐震寰 | en_US |
dc.contributor.author | Jenn-wan Tarng | en_US |
dc.date.accessioned | 2014-12-12T02:53:20Z | - |
dc.date.available | 2014-12-12T02:53:20Z | - |
dc.date.issued | 2005 | en_US |
dc.identifier.uri | http://140.113.39.130/cdrfb3/record/nctu/#GT009313629 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/78443 | - |
dc.description.abstract | 本論文將利用二種方法來最佳化CMOS螺旋電感Q值.第一種方法是推導出串聯電阻的數學公式,並且經由減少串聯電阻來推導出適當的電感金屬線寬來增加品質因素,經過數值模擬驗證電感品質因素增加20%以上.第二種方法是利用基因演算法.論文最後將比較二種方法所得到的結果. | zh_TW |
dc.description.abstract | This thesis employs two methods to optimize the quality factor (Q) of CMOS spiral insuctors. The first method is deriving an analytical formula of series resistance and determines the proper width of metal strip which improves the quality factor by decresing series resistance of inductor. Numerical simulation validates our method and shows that it can improve Q factor by more than 20%. The second method is using genetic algorithm. As the end, the results of two methods are compared. | en_US |
dc.language.iso | zh_TW | en_US |
dc.subject | CMOS螺旋電感 | zh_TW |
dc.subject | 品質因素 | zh_TW |
dc.subject | 串聯電阻 | zh_TW |
dc.subject | 基因演算法 | zh_TW |
dc.subject | CMOS spiral inductor | en_US |
dc.subject | quality factor (Q) | en_US |
dc.subject | series resistance | en_US |
dc.subject | genetic algorithm | en_US |
dc.title | CMOS螺旋電感最佳化Q值方法之研究 | zh_TW |
dc.title | Study of the Optimized Q Factor of CMOS Spiral Inductor | en_US |
dc.type | Thesis | en_US |
dc.contributor.department | 電信工程研究所 | zh_TW |
顯示於類別: | 畢業論文 |