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dc.contributor.author張懷文en_US
dc.contributor.authorHuai-Wen Changen_US
dc.contributor.author唐震寰en_US
dc.contributor.authorJenn-wan Tarngen_US
dc.date.accessioned2014-12-12T02:53:20Z-
dc.date.available2014-12-12T02:53:20Z-
dc.date.issued2005en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT009313629en_US
dc.identifier.urihttp://hdl.handle.net/11536/78443-
dc.description.abstract本論文將利用二種方法來最佳化CMOS螺旋電感Q值.第一種方法是推導出串聯電阻的數學公式,並且經由減少串聯電阻來推導出適當的電感金屬線寬來增加品質因素,經過數值模擬驗證電感品質因素增加20%以上.第二種方法是利用基因演算法.論文最後將比較二種方法所得到的結果.zh_TW
dc.description.abstractThis thesis employs two methods to optimize the quality factor (Q) of CMOS spiral insuctors. The first method is deriving an analytical formula of series resistance and determines the proper width of metal strip which improves the quality factor by decresing series resistance of inductor. Numerical simulation validates our method and shows that it can improve Q factor by more than 20%. The second method is using genetic algorithm. As the end, the results of two methods are compared.en_US
dc.language.isozh_TWen_US
dc.subjectCMOS螺旋電感zh_TW
dc.subject品質因素zh_TW
dc.subject串聯電阻zh_TW
dc.subject基因演算法zh_TW
dc.subjectCMOS spiral inductoren_US
dc.subjectquality factor (Q)en_US
dc.subjectseries resistanceen_US
dc.subjectgenetic algorithmen_US
dc.titleCMOS螺旋電感最佳化Q值方法之研究zh_TW
dc.titleStudy of the Optimized Q Factor of CMOS Spiral Inductoren_US
dc.typeThesisen_US
dc.contributor.department電信工程研究所zh_TW
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