一維奈米帶狀銀之研究

Abstract

本論文中，利用簡易的賈凡尼置換反應(galvanic displacement reaction)，將硝酸銀溶液中加入十六烷基三甲基氯化銨(cetyl -trimethylammonum chloride; CTAC)作為晶面成長控制劑，經由氧化銅網(穿透式電子顯微鏡專用)上的銅原子以還原溶液中的硝酸銀，合成一維奈米帶狀銀產物，其厚度小於10 nm，寬度約為20~100 nm而長度可達10 μm。實驗過程中，我們發現反應條件非常嚴苛，產率受到許多變因的影響，其中以靜置時間最為重要，控制在15分鐘產率最高。而銅網上碳膜的形態、銅的來源以及反應溫度皆對產率有所影響。除此之外，我們也針對此奈米帶狀銀進行一系列的結構鑑定，發現其結構為稀有的六方最密堆積(4H)。由於銀為金屬中擁有最佳導電與導熱性的材料，而此一維奈米帶狀結構擁有比其他一維材料更大的表面積，預期此奈米帶狀銀將深具應用的潛力。

In this study, We use cetyltrimethylammonium chloride (CTAC) as the growth control agent to fabricate the one dimensional silver nanobelt via galvanic displacement reaction on TEM copper grid. The silver nanobelt with a thickness less than 10 nm, a width 30 ~ 100 nm, a length up to 10 μm, was prepared by reacting AgNO3(aq) and Cu(s) in an aqueous solution of CTAC. In this experiment, the silver nanobelt depends on a critical combination of many factors in the environments. The most important one is stand time, and 15 minutes is the best. Other factors such as formations of the carbon film, copper source, and reaction temperature also play a significant role to effect the yield. Besides, we found that the silver nanobelt is a novel single crystalline hexagonal 4H structure. Because Silver is the best conductance in metal and nanobelt structures have the high surface area, we hope their potential use as interconnects in the future nanoelectronics and application for nanosensors.