CMOS Fully Compatible Embedded Non-Volatile Memory System With TiO(2)-SiO(2) Hybrid Resistive-Switching Material

Abstract

We demonstrate a non-volatile CMOS fully compatible embedded memory cell with a hybrid resistive switching material, TiO(2)-SiO(2), in a 0.18 mu m node CMOS process. Both voltage-and temperature-dependent transports indicate that a Schottky-type resistance switching model dominates the TiO(2) based transition-metal-oxide resistive random access memory (TMO-RRAM) system. Data retention is improved by inserting a very thin SiO(2) layer between the bottom electrode and TiO(2) film to enhance the Schottky barrier height, while maintaining TiO(2) based RRAM characteristics.