Title: | 半導體作業環境中有害物砷之探討 Hazardous Arsenic in Semiconductor Working Area |
Authors: | 戴振勳 Cheng - Hsun Tai 蔡春進 石東生 Chuen - Jinn Tsai Tung - Sheng Shih 工學院產業安全與防災學程 |
Keywords: | 砷;離子植入機;預防保養;設備除污作業;表面擦拭試驗;Arsenic;Ion Implant;Preventive Maintenance;Equipment Decontamination;Wipe test |
Issue Date: | 2004 |
Abstract: | 摘要 半導體離子植入機臺 (Ion Implant)進行晶片製程中,除正常例行預防保養(PM: Preventive Maintenance)外,尚有設備除污作業(Equipment Decontamination)。此除污作業之時機為整廠除役(Phase Out),設備移轉(公司內部,國內移轉至國外,機臺展示之後移機),設備等級提昇及舊式機臺移轉。本研究的目的為了解目前進行設備移轉前的除污程序完成之後,在設備主要零組件表面的有害物砷之總質量探討。 本研究針對殘餘砷及其化合物(以總砷計)的總質量,配合檢測機構,使用擦拭試驗(Wipe Test)方法取樣。目前國內砷及其化合物(以總砷計)在空氣中的容許濃度為0.5mg/m3,AsH3在空氣中的容許濃度為0.05ppm (0.16mg/m3),尚無砷表面質量之標準。本研究分析了29個樣本,採樣方法是以37 mm 的混酸纖維濾紙(MCE)沾去離子水擦拭。當擦拭區域為規則的平整表面時,擦拭的表面為一10 cm □ 10 cm; 若為不規則表面,則僅控制擦拭的面積大小為100cm2。目前擦拭的結果顯示每100cm2的砷總質量為 0.1~96.73μg,低於一般工業界的參考限值100μg。另外,本研究針對設備主要零組件除污作業廠商進行工具、桌面、包裝箱表面取樣擦拭之採樣,結果顯示每100cm2的表面砷總質量為0.011~ 39.03μg.。 本研究擦拭試驗的結果發現,離子植入機臺經設備除污作業,移轉至新半導體廠,再進行機臺設備裝機及測試,每100cm2的表面砷之總質量為 0.1~96.73μg,在容許可接受範圍。另外,零組件除污作業廠商之各項表面取樣擦拭之採樣結果,每100cm2的表面砷總質量為0.011~ 39.03μg,均在容許可接受範圍。 關鍵詞: 砷,離子植入機,預防保養,設備除污作業,表面擦拭試驗 ABSTRACT Ion Implant Tool is one of the wafer manufacturing processes in Semiconductor Industry. In addition to the routine preventive maintenance, equipment decontamination operation is also needed. The equipment decontamination operation is conducted during the factory phase-out, tool transfer (within company, transfer to foreign country, after tool demonstration), upgrade of the tools and relocation of the old tools. The purpose of this study is to know the total amount of Arsenic compound which exists on the surface of the tool parts, after equipment decontamination is completed and before relocation of the tools. This study use the wipe test method to find-out the mass of the residual Arsenic, and its compounds (total As), with the aid of the consultant company. In Taiwan, the Permissible Exposure Level) of Arsenic, inorganic compounds (as total As ) is 0.5mg/m3, and 0.05ppm (0.16mg/m3) for AsH3 , respectively. However, there is no standard for the amount of As on the surface. This study has analyzed 29 samples taken from wipe test using 37 mm MCE filters wetted by D.I. water. If the surface is flat, the wiping area is 10 cm X 10 cm. For irregular surface, the wiping area is controlled within about 100 cm2. The experimental data show that the As mass per 100 cm2 is 0.1 ~ 96.73μg, lower than the reference limiting value of 100μg in the industry. In addition, this study also conducted the wipe test on the tools, desk surface, and the surface of packaging boxes of the major company that handled the decontamination operation. The test results show that As mass per 100 cm2 is from 0.011~ 39.03μg. This study wipe test experimental data show that the As mass per 100 cm2 is 0.1 ~ 96.73μg , lower than the reference limiting value in the industry , after the Ion Implant Tool equipment decontamination and transfer to new Semiconductor Industry for installation、testing. In addition, this study also conducted the wipe test on the major company that handled the decontamination operation, the test experimental data show that the As mass per 100 cm2 is 0.011~ 39.03μg, lower than the reference limiting value in the industry. Keywords: Arsenic, Ion Implant, Preventive Maintenance, Equipment Decontamination, Wipe test. |
URI: | http://140.113.39.130/cdrfb3/record/nctu/#GT008966505 http://hdl.handle.net/11536/79725 |
Appears in Collections: | Thesis |
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