完整后设资料纪录
DC 栏位语言
dc.contributor.author戴振勋en_US
dc.contributor.authorCheng - Hsun Taien_US
dc.contributor.author蔡春进en_US
dc.contributor.author石东生en_US
dc.contributor.authorChuen - Jinn Tsaien_US
dc.contributor.authorTung - Sheng Shihen_US
dc.date.accessioned2014-12-12T02:59:19Z-
dc.date.available2014-12-12T02:59:19Z-
dc.date.issued2004en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT008966505en_US
dc.identifier.urihttp://hdl.handle.net/11536/79725-
dc.description.abstract摘要
半导体离子植入机台 (Ion Implant)进行晶片制程中,除正常例行预防保养(PM: Preventive Maintenance)外,尚有设备除污作业(Equipment Decontamination)。此除污作业之时机为整厂除役(Phase Out),设备移转(公司内部,国内移转至国外,机台展示之后移机),设备等级提升及旧式机台移转。本研究的目的为了解目前进行设备移转前的除污程序完成之后,在设备主要零组件表面的有害物砷之总质量探讨。
本研究针对残余砷及其化合物(以总砷计)的总质量,配合检测机构,使用擦拭试验(Wipe Test)方法取样。目前国内砷及其化合物(以总砷计)在空气中的容许浓度为0.5mg/m3,AsH3在空气中的容许浓度为0.05ppm (0.16mg/m3),尚无砷表面质量之标准。本研究分析了29个样本,采样方法是以37 mm 的混酸纤维滤纸(MCE)沾去离子水擦拭。当擦拭区域为规则的平整表面时,擦拭的表面为一10 cm □ 10 cm; 若为不规则表面,则仅控制擦拭的面积大小为100cm2。目前擦拭的结果显示每100cm2的砷总质量为 0.1~96.73μg,低于一般工业界的参考限值100μg。另外,本研究针对设备主要零组件除污作业厂商进行工具、桌面、包装箱表面取样擦拭之采样,结果显示每100cm2的表面砷总质量为0.011~ 39.03μg.。
本研究擦拭试验的结果发现,离子植入机台经设备除污作业,移转至新半导体厂,再进行机台设备装机及测试,每100cm2的表面砷之总质量为 0.1~96.73μg,在容许可接受范围。另外,零组件除污作业厂商之各项表面取样擦拭之采样结果,每100cm2的表面砷总质量为0.011~ 39.03μg,均在容许可接受范围。
关键词: 砷,离子植入机,预防保养,设备除污作业,表面擦拭试验
zh_TW
dc.description.abstractABSTRACT
Ion Implant Tool is one of the wafer manufacturing processes in Semiconductor Industry. In addition to the routine preventive maintenance, equipment decontamination operation is also needed. The equipment decontamination operation is conducted during the factory phase-out, tool transfer (within company, transfer to foreign country, after tool demonstration), upgrade of the tools and relocation of the old tools. The purpose of this study is to know the total amount of Arsenic compound which exists on the surface of the tool parts, after equipment decontamination is completed and before relocation of the tools.

This study use the wipe test method to find-out the mass of the residual Arsenic, and its compounds (total As), with the aid of the consultant company. In Taiwan, the Permissible Exposure Level) of Arsenic, inorganic compounds (as total As ) is 0.5mg/m3, and 0.05ppm (0.16mg/m3) for AsH3 , respectively. However, there is no standard for the amount of As on the surface. This study has analyzed 29 samples taken from wipe test using 37 mm MCE filters wetted by D.I. water. If the surface is flat, the wiping area is 10 cm X 10 cm. For irregular surface, the wiping area is controlled within about 100 cm2. The experimental data show that the As mass per 100 cm2 is 0.1 ~ 96.73μg, lower than the reference limiting value of 100μg in the industry. In addition, this study also conducted the wipe test on the tools, desk surface, and the surface of packaging boxes of the major company that handled the decontamination operation. The test results show that As mass per 100 cm2 is from 0.011~ 39.03μg.

This study wipe test experimental data show that the As mass per 100 cm2 is 0.1 ~ 96.73μg , lower than the reference limiting value in the industry , after the Ion Implant Tool equipment decontamination and transfer to new Semiconductor Industry for installation、testing. In addition, this study also conducted the wipe test on the major company that handled the decontamination operation, the test experimental data show that the As mass per 100 cm2 is 0.011~ 39.03μg, lower than the reference limiting value in the industry.
Keywords: Arsenic, Ion Implant, Preventive Maintenance, Equipment Decontamination, Wipe test.
en_US
dc.language.isozh_TWen_US
dc.subjectzh_TW
dc.subject离子植入机zh_TW
dc.subject预防保养zh_TW
dc.subject设备除污作业zh_TW
dc.subject表面擦拭试验zh_TW
dc.subjectArsenicen_US
dc.subjectIon Implanten_US
dc.subjectPreventive Maintenanceen_US
dc.subjectEquipment Decontaminationen_US
dc.subjectWipe testen_US
dc.title半导体作业环境中有害物砷之探讨zh_TW
dc.titleHazardous Arsenic in Semiconductor Working Areaen_US
dc.typeThesisen_US
dc.contributor.department工学院产业安全与防灾学程zh_TW
显示于类别:Thesis


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