標題: Performance Improvement of Metal-Insulator-Metal Capacitors Using Postmetallization-Annealed Treatment on the Al(2)O(3)/TiO(2)/Al(2)O(3) Film
作者: Huang, Chingchien
Cheng, Chun-Hu
Lee, Kaotao
Liou, Bo-Heng
機械工程學系
電子工程學系及電子研究所
Department of Mechanical Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jan-2009
摘要: This paper reports on metal-insulator-metal (MIM) capacitors comprised of Al(2)O(3)/TiO(2)/Al(2)O(3) laminate structure with postmetallization-annealing (PMA) treatment. By applying the laminate structure to TiO(2) capacitors, deposition of the Al(2)O(3) layer enables significant leakage current reduction while maintaining good electrical performance. For an Al(2)O(3)/TiO(2)/Al(2)O(3) film with PMA treatment, the electrical characteristics can be further improved, which is mostly due to the passivation of the dielectric interface charges. We have achieved low leakage current of 6.4x10(-9) A/cm(2) at 1 V for 18.3 fF/mu m(2) density Al(2)O(3)/TiO(2)/Al(2)O(3) MIM capacitors. These results meet the International Technology Roadmap for Semiconductors requirements (year 2018) of 10 fF/mu m(2) density and J/(CV)< 7 fA/(pFV).
URI: http://dx.doi.org/10.1149/1.3072769
http://hdl.handle.net/11536/7997
ISSN: 1099-0062
DOI: 10.1149/1.3072769
期刊: ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume: 12
Issue: 4
起始頁: H123
結束頁: H126
Appears in Collections:Articles